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| SI9933ADY Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.075 @ VGS = -4.5 V -20 20 0.105 @ VGS = -3.0 V 0.115 @ VGS = -2.7 V ID (A) "3.4 "2.9 "2.6 S1 S2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View D1 D1 D2 D2 8 7 6 5 D1 D1 D2 D2 G1 G2 P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit -20 "12 "3.4 "2.7 "16 -2.0 2.0 Unit V A W 1.3 -55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70651 S-00652--Rev. B, 27-Mar-00 www.vishay.com S FaxBack 408-970-5600 Symbol RthJA Limit 62.5 Unit _C/W 1 SI9933ADY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current VGS(th) IGSS IDSS VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "12 V VDS = -16 V, VGS = 0 V VDS = -10 V, VGS = 0 V, TJ = 85_C VDS v -5 V, VGS = -4.5 V VDS v -5 V, VGS = -2.7 V VGS = -4.5 V, ID = -3.2 A Drain-Source On-State Resistanceb DiS OS Ri rDS(on) VGS = -3.0 V, ID = -2.0 A VGS = -2.7 V, ID = -1 A Forward Transconductanceb Diode Forward Voltageb gfs VSD VDS = -9 V, ID = -3.4 A IS = -2.0 A, VGS = 0 V -16 A -3 0.06 0.078 0.085 8 -0.7 -1.2 0.075 0.105 0.115 S V W -0.8 "100 -1 -3 V nA mA Symbol Test Condition Min Typa Max Unit On-State Drain Currentb ID(on) Dynamica Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = -2.0 A, di/dt = 100 A/ms VDD = -6 V, RL = 6 W 6 V, ID ^ -1 A, VGEN = -4.5 V RG = 6 W 1A 4 5 V, VDS = -6 V, VGS = -4.5 V ID = -3.2 A 6V 4 5 V, 32 10 2.1 3.3 16 46 40 25 60 40 80 70 40 100 ns 20 nC C Notes a. For design aid only; not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. www.vishay.com S FaxBack 408-970-5600 2 Document Number: 70651 S-00652--Rev. B, 27-Mar-00 SI9933ADY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 16 VGS = 5 - 3.5 V 12 I D - Drain Current (A) I D - Drain Current (A) 3V 12 16 TC = -55_C 25_C 125_C 8 Transfer Characteristics 8 2.5 V 4 2V 4 0 0 2 4 6 8 10 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.20 2000 Capacitance r DS(on) - On-Resistance ( ) 0.16 C - Capacitance (pF) VGS = 3 V 0.12 VGS = 2.7 V 1500 1000 Ciss 0.08 VGS = 4.5 V Coss 500 Crss 0.04 0 0 3 6 9 12 15 0 0 2 4 6 8 10 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 4.5 4.0 V GS - Gate-to-Source Voltage (V) Gate Charge 2.0 On-Resistance vs. Junction Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0 0 2 4 6 8 10 r DS(on) - On-Resistance ( ) (Normalized) 3.5 VDS = 6 V ID = 3.2 A 1.6 VGS = 4.5 V ID = 3.2 A 1.2 0.8 0.4 0 -50 0 50 100 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 70651 S-00652--Rev. B, 27-Mar-00 www.vishay.com S FaxBack 408-970-5600 3 SI9933ADY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 TJ = 150_C I S - Source Current (A) 10 TJ = 25_C r DS(on) - On-Resistance ( ) 0.16 ID = 3.2 A 0.12 0.20 On-Resistance vs. Gate-to-Source Voltage 0.08 0.04 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.8 40 Single Pulse Power 0.6 ID = 250 A V GS(th) Variance (V) 0.4 Power (W) 30 0.2 20 0.0 10 -0.2 -0.4 -50 0 -25 0 25 50 75 100 125 150 0.01 0.1 1 Time (sec) 10 30 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 62.5_C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 10-3 10-2 10-1 1 4. Surface Mounted 10 30 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 4 Document Number: 70651 S-00652--Rev. B, 27-Mar-00 |
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